Total dose radiation test methodologies for advanced spacecraft electronics experiencing enhanced low dose rate sensitivity

• Main Author: Ashton, Christopher D.
• Other Authors: Underwood, Craig
• Published: University of Surrey 2016
• Subjects: 621.381
• Online Access: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.683867

The purpose of this thesis is to determine whether hydrogen can be implanted into elec- tronic components for the goal of investigating low ionising dose rate sensitivity, and using this to suggest whether hydrogen implantation can be used as an accelerated method to detect ELDRS (Enhanced Low Dose Rate Sensitivity) susceptability. Current ground testing methods for total ionising dose irradiate using cobalt-60 at dose rates greater than 10mGy(Si)/s up to 200Gy. It has been found that bipolar devices show an increased susceptibility to radiation induced damage at dose rates below 10mGy(Si)/s known as ELDRS. Current research has linked ELDRS susceptibility with hydrogen content within the integrated circuit and experiments based upon hydrogen soaking de-lidded bipolar devices demonstrate this relationship, however this has not led to an accepted method for testing ELDRS susceptibility in previously un-tested devices. In this thesis, a novel proposal is put forward whereby bipolar devices are directly implanted with hydrogen using a targeted ion beam in order to accelerate the testing process. Hydrogen implantation via a 600keV ion beam has been achieved to a level of 10^17 H/cm^2 in Analog Device’s AD590KF temperature transducer, and 10^14-15 H/cm^2in National Semiconductor’s LM124 quad operational amplifiers. Devices were decapped, optically analysed, and targeted with a focussed proton beam. These devices were then irradiated at 15mGy/s, 5mGy/s and 15mGy/s. Increased degradation was seen at lower dose rates which was matched by high dose rate irradiation of the implanted devices followed by a room temperature anneal. The use of ion implantation for the development of an accelerated ELDRS test method is proposed. This thesis demonstrated that hydrogen can be succesfully implanted into devices, established an upper bound for the LM124 for implantation and a lower bound for hydrogen remaining in the target area and the effect of hydrogen implantation on the AD590 temperature transducer is discussed. This thesis concludes by suggesting hydrogen implantation as a method for use by manufacturers during the design and investigation of intrinsically ELDRS-free technologies.