360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory
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2014
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ndltd-bl.uk-oai-ethos.bl.uk-7081862019-03-05T15:51:49Z360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memoryGonzález Oyarce, Aníbal Lautaro2014530University of Cambridgehttps://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708186Electronic Thesis or Dissertation |
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530 |
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530 González Oyarce, Aníbal Lautaro 360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory |
author |
González Oyarce, Aníbal Lautaro |
author_facet |
González Oyarce, Aníbal Lautaro |
author_sort |
González Oyarce, Aníbal Lautaro |
title |
360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory |
title_short |
360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory |
title_full |
360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory |
title_fullStr |
360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory |
title_full_unstemmed |
360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory |
title_sort |
360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory |
publisher |
University of Cambridge |
publishDate |
2014 |
url |
https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708186 |
work_keys_str_mv |
AT gonzalezoyarceaniballautaro 360domainwallsnucleationmechanismsduringthinfilmswitchingandtheirapplicationtohighdensitynonvolatilememory |
_version_ |
1718997508147904512 |