360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory

Bibliographic Details
Main Author: González Oyarce, Aníbal Lautaro
Published: University of Cambridge 2014
Subjects:
530
Online Access:https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708186
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spelling ndltd-bl.uk-oai-ethos.bl.uk-7081862019-03-05T15:51:49Z360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memoryGonzález Oyarce, Aníbal Lautaro2014530University of Cambridgehttps://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708186Electronic Thesis or Dissertation
collection NDLTD
sources NDLTD
topic 530
spellingShingle 530
González Oyarce, Aníbal Lautaro
360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory
author González Oyarce, Aníbal Lautaro
author_facet González Oyarce, Aníbal Lautaro
author_sort González Oyarce, Aníbal Lautaro
title 360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory
title_short 360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory
title_full 360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory
title_fullStr 360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory
title_full_unstemmed 360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory
title_sort 360° domain walls : nucleation mechanisms during thin film switching, and their application to high density non-volatile memory
publisher University of Cambridge
publishDate 2014
url https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708186
work_keys_str_mv AT gonzalezoyarceaniballautaro 360domainwallsnucleationmechanismsduringthinfilmswitchingandtheirapplicationtohighdensitynonvolatilememory
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