Revisiting Nitride Semiconductors: Epilayers, p-Type Doping and Nanowires
This dissertation investigates the growth of high quality GaN and InN thin films by plasma assisted molecular beam epitaxy (PAMBE). It also explores the growth of self-seeded GaN branching nanowires and p-type doping of InN, two topics of particular interest at present. The growth of high quality I...
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Language: | en |
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University of Canterbury. Electrical and Computer Engineering
2009
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Online Access: | http://hdl.handle.net/10092/2108 |