Revisiting Nitride Semiconductors: Epilayers, p-Type Doping and Nanowires

Revisiting Nitride Semiconductors: Epilayers, p-Type Doping and Nanowires

This dissertation investigates the growth of high quality GaN and InN thin films by plasma assisted molecular beam epitaxy (PAMBE). It also explores the growth of self-seeded GaN branching nanowires and p-type doping of InN, two topics of particular interest at present. The growth of high quality I...

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Bibliographic Details
Main Author:	Kendrick, Chito Edsel
Language:	en
Published:	University of Canterbury. Electrical and Computer Engineering 2009
Subjects:	InN GaN nanowires branching p-type doping self-seeded VLS
Online Access:	http://hdl.handle.net/10092/2108

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