Doping effect of a-Si thin films by ion implantation.

• Other Authors: Tang, Cheung-Yin.
• Format: Others
• Language: English
• Published: Chinese University of Hong Kong 1991
• Subjects: Thin films; Ion implantation
• Online Access: http://library.cuhk.edu.hk/record=b5886940; http://repository.lib.cuhk.edu.hk/en/item/cuhk-318791

by Cheung-Yin Tang. === Title also in Chinese. === Thesis (M.Phil.)--Chinese University of Hong Kong, 1991. === Bibliography: leaves 83-84. === ACKNOWLEDGEMENTS --- p.i === TABLE OF CONTENTS --- p.ii === ABSTRACT --- p.iv === Chapter Chapter 1 - --- Introduction --- p.1 === Chapter 1.1 --- Structure --- p.2 === Chapter 1.1.1 --- Physical Structure --- p.2 === Chapter 1.1.2 --- Electronic Structure --- p.3 === Chapter 1.2 --- Hydrogenation --- p.9 === Chapter 1.2.1 --- Hydrogenation during film formation --- p.10 === Chapter 1.2.2 --- Posthydrogenation --- p.10 === Chapter 1.3 --- Doping of a-Si --- p.11 === Chapter 1.4 --- Previous Results and Applications --- p.13 === Chapter 1.4.1 --- Results --- p.13 === Chapter 1.4.2 --- Applications --- p.24 === Chapter Chapter 2 - --- Experimental Set-up and Techniques --- p.25 === Chapter 2.1 --- Sample Preparation --- p.25 === Chapter 2.1.1 --- Substrate cleaning procedure --- p.25 === Chapter 2.1.2 --- Deposition Method --- p.26 === Chapter 2.1.3 --- Annealing Method --- p.30 === Chapter 2.1.4 --- Hydrogenation Method --- p.31 === Chapter 2.1.5 --- Doping Method --- p.33 === Chapter 2.2 --- Measurements --- p.34 === Chapter 2.2.1 --- Dark Conductivity --- p.34 === Chapter 2.2.2 --- Room Temperature Photo-conductivity --- p.39 === Chapter 2.2.3 --- ESR (Electron Spin Resonance) --- p.39 === Chapter Chapter 3 - --- Results and Discussions --- p.41 === Chapter 3.1 --- Doping effect and posthydrogenation --- p.42 === Chapter 3.2 --- Annealing of the doped films --- p.44 === Chapter 3.3 --- Implantation at different dose levels --- p.46 === Chapter Chapter 4 - --- Conclusions --- p.82 === REFERENCES --- p.83 === APPENDIX --- p.85