Photoluminescent properties of GaAs₁₋xNx epitaxial layers on GaAs substrates =: 砷鎵化上砷氮化鎵外延層的光致發光性質.
by Lam Siu Dan. === Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. === Includes bibliographical references (leaves 65-67). === Text in English; abstracts in English and Chinese. === by Lam Siu Dan. === Table of contents --- p.I === Chapter Chapter 1 --- Introduction === Chapter 1.1 --- In...
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| Format: | Others |
| Language: | English Chinese |
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2001
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| Online Access: | http://library.cuhk.edu.hk/record=b5890728 http://repository.lib.cuhk.edu.hk/en/item/cuhk-323578 |
| Summary: | by Lam Siu Dan. === Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. === Includes bibliographical references (leaves 65-67). === Text in English; abstracts in English and Chinese. === by Lam Siu Dan. === Table of contents --- p.I === Chapter Chapter 1 --- Introduction === Chapter 1.1 --- Interest in GaAs1-xNx/GaAs alloy --- p.1 === Chapter 1.2 --- Interest in growing GaAs1-xNx/GaAs using different carrier gases --- p.4 === Chapter 1.3 --- Theoretical calculation of the band gap energy of GaAs1-xNx alloy --- p.4 === Chapter 1.4 --- Advantages of using photoluminescence (PL) --- p.7 === Chapter 1.5 --- Our work --- p.9 === Chapter Chapter 2 --- Experimental setup and procedures === Chapter 2.1 --- Growth conditions of GaAs1-xNx on (001) GaAs --- p.10 === Chapter 2.2 --- X-ray diffraction === Chapter 2.2.1 --- Setup --- p.12 === Chapter 2.2.2 --- Types of X-ray measurements --- p.12 === Chapter 2.3 --- PL measurements === Chapter 2.3.1 --- Setup --- p.14 === Chapter 2.3.2 --- Types of PL measurement --- p.16 === Chapter Chapter 3 --- Results and discussions === Chapter 3.1 --- X-ray diffraction of GaAs1-xNx/GaAs === Chapter 3.1.1 --- GaAs1-xNx/GaAs grown using H2 as carrier gas --- p.17 === Chapter 3.1.2 --- GaAs1-xNx/GaAs grown using N2 as carrier gas --- p.28 === Chapter 3.1.3 --- Peak widths of the X-ray rocking curves of GaAs1-xNx/GaAs --- p.30 === Chapter 3.2 --- Room temperature (RT) and 10K PL of GaAs1-xNx/GaAs === Chapter 3.2.1 --- The energy of the NBE peak of GaAs1-xNx/GaAs --- p.32 === Chapter 3.2.2 --- The width of the NBE peak of GaAs1-xNx/GaAs --- p.44 === Chapter 3.3 --- Excitation power density (EPD) dependent PL studies of GaAs1-xNx/GaAs === Chapter 3.3.1 --- The energy of the NBE peak of GaAs1-xNx/GaAs --- p.49 === Chapter 3.3.2 --- The width of the NBE peak of GaAs1-xNx/GaAs --- p.55 === Chapter 3.4 --- Temperature dependent PL studies of GaAs1-xNx/GaAs --- p.57 === Chapter Chapter 4 --- Conclusions --- p.62 === References --- p.63 |
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