Study of III-nitride Nanowire Growth and Devices on Unconventional Substrates
III-Nitride materials, which consist of AlN, GaN, InN, and their alloys have become the cornerstone of the third generation compound semiconductor. Planar IIINitride materials are commonly grown on sapphire substrates which impose several limitations such as challenging scalability, rigid substrate,...
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| Language: | en |
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2019
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| Online Access: | Prabaswara, A. (2019). Study of III-nitride Nanowire Growth and Devices on Unconventional Substrates. KAUST Research Repository. https://doi.org/10.25781/KAUST-08V79 http://hdl.handle.net/10754/656923 |