Modelling of defect states in covalent amorphous solids

Includes abstract. === Includes bibliographical references (leaves 181-202). === This study consists of the tight binding molecular dynamics simulations, of the bulk and defect structures, in hydrogenated amorphous silicon. Emphasis is given to the systematic analysis of the changes in the network s...

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Main Author: Ukpong, Aniekan Magnus
Other Authors: Britton, David T
Format: Doctoral Thesis
Language:English
Published: University of Cape Town 2014
Subjects:
Online Access:http://hdl.handle.net/11427/6514
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spelling ndltd-netd.ac.za-oai-union.ndltd.org-uct-oai-localhost-11427-65142020-07-22T05:07:46Z Modelling of defect states in covalent amorphous solids Ukpong, Aniekan Magnus Britton, David T Härting, Margit Physics Includes abstract. Includes bibliographical references (leaves 181-202). This study consists of the tight binding molecular dynamics simulations, of the bulk and defect structures, in hydrogenated amorphous silicon. Emphasis is given to the systematic analysis of the changes in the network structures, which occur due to the incorporation of hydrogen, at different levels of concentration. The atomic-level stress in the simulated structures is defined, in a manner that is consistent with the local structure. The concept of configurational landscapes is introduced, as a new analysis framework for the correlations between the stress fluctuations and the modifications of the local structure. 2014-08-13T20:03:26Z 2014-08-13T20:03:26Z 2008 Doctoral Thesis Doctoral PhD http://hdl.handle.net/11427/6514 eng application/pdf University of Cape Town Faculty of Science Department of Physics
collection NDLTD
language English
format Doctoral Thesis
sources NDLTD
topic Physics
spellingShingle Physics
Ukpong, Aniekan Magnus
Modelling of defect states in covalent amorphous solids
description Includes abstract. === Includes bibliographical references (leaves 181-202). === This study consists of the tight binding molecular dynamics simulations, of the bulk and defect structures, in hydrogenated amorphous silicon. Emphasis is given to the systematic analysis of the changes in the network structures, which occur due to the incorporation of hydrogen, at different levels of concentration. The atomic-level stress in the simulated structures is defined, in a manner that is consistent with the local structure. The concept of configurational landscapes is introduced, as a new analysis framework for the correlations between the stress fluctuations and the modifications of the local structure.
author2 Britton, David T
author_facet Britton, David T
Ukpong, Aniekan Magnus
author Ukpong, Aniekan Magnus
author_sort Ukpong, Aniekan Magnus
title Modelling of defect states in covalent amorphous solids
title_short Modelling of defect states in covalent amorphous solids
title_full Modelling of defect states in covalent amorphous solids
title_fullStr Modelling of defect states in covalent amorphous solids
title_full_unstemmed Modelling of defect states in covalent amorphous solids
title_sort modelling of defect states in covalent amorphous solids
publisher University of Cape Town
publishDate 2014
url http://hdl.handle.net/11427/6514
work_keys_str_mv AT ukponganiekanmagnus modellingofdefectstatesincovalentamorphoussolids
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