Metal-insulator transition in boron-ion implanted type IIa diamond.
A thesis submitted to the Faculty of Science, University of the Witwatersrand, Johannesburg, in fulfillment of the requirements for the degree of Doctor of Philosophy. === High purity natural type Il a diamond specimens were used in this study. Conducting layers in the surfaces of these diamonds w...
Main Author: | |
---|---|
Format: | Others |
Language: | en |
Published: |
2019
|
Subjects: | |
Online Access: | https://hdl.handle.net/10539/26301 |
id |
ndltd-netd.ac.za-oai-union.ndltd.org-wits-oai-wiredspace.wits.ac.za-10539-26301 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-netd.ac.za-oai-union.ndltd.org-wits-oai-wiredspace.wits.ac.za-10539-263012019-05-11T03:41:53Z Metal-insulator transition in boron-ion implanted type IIa diamond. Tshepe, Tshakane Metal-insulator transitions. Transition metals. Ion implantation. A thesis submitted to the Faculty of Science, University of the Witwatersrand, Johannesburg, in fulfillment of the requirements for the degree of Doctor of Philosophy. High purity natural type Il a diamond specimens were used in this study. Conducting layers in the surfaces of these diamonds were generated using low-ion dose multiple implantation-annealing steps. The implantation energies and the ion-doses were spread evenly to intermix the point-defects, thereby increasing the probability of interstitialvacancy recombinations and promoting dopant-interstitial-vacancy combination resulting in activated dopant sites in the implanted layers. The process used to prepare our samples is known as cold-implantation-rapid-annealing (CIRA). Carbon-ion and boron-ion implantation was used to prepare the diamond specimens, and de-conductivity measurements in the temperature range of 1.5-300 K were made following each CIRA sequence. An electrical conductivity crossover from the Mott variable range hopping (VRH) to the Efros-Shklovskii VRH conduction was observed when the temperature of insulating samples was lowered. The conductivity crossover temperature Tcross decreases with increasing concentration of the boron-ion dose in the implanted layers, indicating the narrowing of the Coulomb gap in the single-particle density of states near the Fermi energy. (Abbreviation abstract) Andrew Chakane 2019 2019-01-22T12:41:50Z 2019-01-22T12:41:50Z 2000 Thesis https://hdl.handle.net/10539/26301 en application/pdf |
collection |
NDLTD |
language |
en |
format |
Others
|
sources |
NDLTD |
topic |
Metal-insulator transitions. Transition metals. Ion implantation. |
spellingShingle |
Metal-insulator transitions. Transition metals. Ion implantation. Tshepe, Tshakane Metal-insulator transition in boron-ion implanted type IIa diamond. |
description |
A thesis submitted to the Faculty of Science, University of the Witwatersrand, Johannesburg,
in fulfillment of the requirements for the degree of Doctor of Philosophy. === High purity natural type Il a diamond specimens were used in this study. Conducting
layers in the surfaces of these diamonds were generated using low-ion dose multiple
implantation-annealing steps. The implantation energies and the ion-doses were spread
evenly to intermix the point-defects, thereby increasing the probability of interstitialvacancy
recombinations and promoting dopant-interstitial-vacancy combination resulting
in activated dopant sites in the implanted layers. The process used to prepare our samples
is known as cold-implantation-rapid-annealing (CIRA). Carbon-ion and boron-ion
implantation was used to prepare the diamond specimens, and de-conductivity measurements
in the temperature range of 1.5-300 K were made following each CIRA sequence.
An electrical conductivity crossover from the Mott variable range hopping (VRH)
to the Efros-Shklovskii VRH conduction was observed when the temperature of insulating
samples was lowered. The conductivity crossover temperature Tcross decreases with
increasing concentration of the boron-ion dose in the implanted layers, indicating the narrowing
of the Coulomb gap in the single-particle density of states near the Fermi energy. (Abbreviation abstract) === Andrew Chakane 2019 |
author |
Tshepe, Tshakane |
author_facet |
Tshepe, Tshakane |
author_sort |
Tshepe, Tshakane |
title |
Metal-insulator transition in boron-ion implanted type IIa diamond. |
title_short |
Metal-insulator transition in boron-ion implanted type IIa diamond. |
title_full |
Metal-insulator transition in boron-ion implanted type IIa diamond. |
title_fullStr |
Metal-insulator transition in boron-ion implanted type IIa diamond. |
title_full_unstemmed |
Metal-insulator transition in boron-ion implanted type IIa diamond. |
title_sort |
metal-insulator transition in boron-ion implanted type iia diamond. |
publishDate |
2019 |
url |
https://hdl.handle.net/10539/26301 |
work_keys_str_mv |
AT tshepetshakane metalinsulatortransitioninboronionimplantedtypeiiadiamond |
_version_ |
1719084847268364288 |