A comparative analysis of radiation effects on silicon, gallium arsenide, and GaInP2/GaAs/Ge triple junction solar cells using a 30 MeV electron linear accelerator
Approved for public release; distribution is unlimited. === Many improvements have been made in the design and manufacture of high efficiency solar cells. The need to understand the behavior of these new types of solar cells is crucial to the procurement of future space systems, both commercial and...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Published: |
Monterey California. Naval Postgraduate School
2012
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10945/2894 |
| Summary: | Approved for public release; distribution is unlimited. === Many improvements have been made in the design and manufacture of high efficiency solar cells. The need to understand the behavior of these new types of solar cells is crucial to the procurement of future space systems, both commercial and military. This thesis studies the results of irradiating three commonly used solar cells with 30 MeV electrons using the Naval Postgraduate School Linear Accelerator. A comparison of the performance characteristics of the three cells is made using commonly accepted parameters and notes the differences in failure mode. Additionally, the affect of current annealing is investigated. === Lieutenant, United States Navy |
|---|