Temperature dependence of dark current in quantum well infrared detectors
Approved for public release; distribution is unlimited. === The I-V characteristics of a bound-to-continuum QWIP device with Al0.37Ga0.63As barriers of 23 nm, In0.1Ga0.9As wells of 3.6 nm, and a doping density (nd) of 1018 cm-3 were gathered and analyzed for various temperatures. The device was cool...
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| Language: | en_US |
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Monterey, California. Naval Postgraduate School
2012
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| Online Access: | http://hdl.handle.net/10945/5914 |