Tenké scintilační vrstvy pro 2D zobrazení
In this work we studied properties of Ce doped garnet scintillator layers (CexLu3-xAl5O12, CexY3-xAl5O12). They were prepared by liquid phase epitaxy. Studied materials show fast response, high quantum efficiency and good chemical and mechanical stability. Thus they are ideal for use in devices for...
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| Format: | Dissertation |
| Language: | Czech |
| Published: |
2009
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| Online Access: | http://www.nusl.cz/ntk/nusl-275596 |
| Summary: | In this work we studied properties of Ce doped garnet scintillator layers (CexLu3-xAl5O12, CexY3-xAl5O12). They were prepared by liquid phase epitaxy. Studied materials show fast response, high quantum efficiency and good chemical and mechanical stability. Thus they are ideal for use in devices for 2D imaging. We measured absorption, excitation and emission spectra and kinetics of luminescence. Aim was to compare properties of grown layers with properties of single crystals grown by Czochralski method. We looked for the impact of melt compounds to measured layer properties. We also tried to determine optimal amount of Ce in layer. We used flux PbO - B2O3 and flux BaO - BaF2 - B2O3. In those fluxes we succeeded to grow garnet layers at temperatures as low as 1000řC. This lead to less intrinsic defects in crystalic lattice of layer in comparison to single crystals grown by Czochralski method (1900řC). Our layers were from 1 to 30 mm thick with higher concentration of Ce than singlecrystal. Due to higher concentration of impurities in layers grown from PbO - B2O3 flux we grown layers from BaO - BaF2 - B2O3 flux too. Flux BaO - BaF2 - B2O3 leaves less impurities in layers. |
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