Ultrarychlá laserová spektroskopie polovodičových nanostruktur
This doctoral thesis deals with analysis of carrier dynamics in semiconductor nanocrystals and nanostructures by methods of ultrafast laser spectroscopy. In three chapters silicon, InAs/GaAs, InAs/AlAs and CdSSe materials are studied. Silicon nanocrystals prepared by sol-gel method were measured by...
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2010
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Online Access: | http://www.nusl.cz/ntk/nusl-279171 |
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ndltd-nusl.cz-oai-invenio.nusl.cz-2791712018-12-10T04:16:14Z Ultrarychlá laserová spektroskopie polovodičových nanostruktur Ultrafast laser spectroscopy of semiconductor nanostructures Neudert, Karel Trojánek, František Nikl, Martin Herynková, Kateřina This doctoral thesis deals with analysis of carrier dynamics in semiconductor nanocrystals and nanostructures by methods of ultrafast laser spectroscopy. In three chapters silicon, InAs/GaAs, InAs/AlAs and CdSSe materials are studied. Silicon nanocrystals prepared by sol-gel method were measured by time-resolved luminescence method with various time resolutions, two-photon absorption and Z-scan method. A model describing findings was suggested. InAs was well measured by upconversion method and gained knowledge appeared to be fully consistent with quantum model. CdSe material was examined in two basic forms - thin films of nanocrystals prepared by chemical deposition and nanocrystals in comercial filters. In both cases all questions regarding influencing optical properties of nanocrystals by modification of their growth were answered. 2010 info:eu-repo/semantics/doctoralThesis http://www.nusl.cz/ntk/nusl-279171 cze info:eu-repo/semantics/restrictedAccess |
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Czech |
format |
Doctoral Thesis |
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NDLTD |
description |
This doctoral thesis deals with analysis of carrier dynamics in semiconductor nanocrystals and nanostructures by methods of ultrafast laser spectroscopy. In three chapters silicon, InAs/GaAs, InAs/AlAs and CdSSe materials are studied. Silicon nanocrystals prepared by sol-gel method were measured by time-resolved luminescence method with various time resolutions, two-photon absorption and Z-scan method. A model describing findings was suggested. InAs was well measured by upconversion method and gained knowledge appeared to be fully consistent with quantum model. CdSe material was examined in two basic forms - thin films of nanocrystals prepared by chemical deposition and nanocrystals in comercial filters. In both cases all questions regarding influencing optical properties of nanocrystals by modification of their growth were answered. |
author2 |
Trojánek, František |
author_facet |
Trojánek, František Neudert, Karel |
author |
Neudert, Karel |
spellingShingle |
Neudert, Karel Ultrarychlá laserová spektroskopie polovodičových nanostruktur |
author_sort |
Neudert, Karel |
title |
Ultrarychlá laserová spektroskopie polovodičových nanostruktur |
title_short |
Ultrarychlá laserová spektroskopie polovodičových nanostruktur |
title_full |
Ultrarychlá laserová spektroskopie polovodičových nanostruktur |
title_fullStr |
Ultrarychlá laserová spektroskopie polovodičových nanostruktur |
title_full_unstemmed |
Ultrarychlá laserová spektroskopie polovodičových nanostruktur |
title_sort |
ultrarychlá laserová spektroskopie polovodičových nanostruktur |
publishDate |
2010 |
url |
http://www.nusl.cz/ntk/nusl-279171 |
work_keys_str_mv |
AT neudertkarel ultrarychlalaserovaspektroskopiepolovodicovychnanostruktur AT neudertkarel ultrafastlaserspectroscopyofsemiconductornanostructures |
_version_ |
1718799952814014464 |