Ultrarychlá laserová spektroskopie polovodičových nanostruktur

This doctoral thesis deals with analysis of carrier dynamics in semiconductor nanocrystals and nanostructures by methods of ultrafast laser spectroscopy. In three chapters silicon, InAs/GaAs, InAs/AlAs and CdSSe materials are studied. Silicon nanocrystals prepared by sol-gel method were measured by...

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Bibliographic Details
Main Author: Neudert, Karel
Other Authors: Trojánek, František
Format: Doctoral Thesis
Language:Czech
Published: 2010
Online Access:http://www.nusl.cz/ntk/nusl-279171
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spelling ndltd-nusl.cz-oai-invenio.nusl.cz-2791712018-12-10T04:16:14Z Ultrarychlá laserová spektroskopie polovodičových nanostruktur Ultrafast laser spectroscopy of semiconductor nanostructures Neudert, Karel Trojánek, František Nikl, Martin Herynková, Kateřina This doctoral thesis deals with analysis of carrier dynamics in semiconductor nanocrystals and nanostructures by methods of ultrafast laser spectroscopy. In three chapters silicon, InAs/GaAs, InAs/AlAs and CdSSe materials are studied. Silicon nanocrystals prepared by sol-gel method were measured by time-resolved luminescence method with various time resolutions, two-photon absorption and Z-scan method. A model describing findings was suggested. InAs was well measured by upconversion method and gained knowledge appeared to be fully consistent with quantum model. CdSe material was examined in two basic forms - thin films of nanocrystals prepared by chemical deposition and nanocrystals in comercial filters. In both cases all questions regarding influencing optical properties of nanocrystals by modification of their growth were answered. 2010 info:eu-repo/semantics/doctoralThesis http://www.nusl.cz/ntk/nusl-279171 cze info:eu-repo/semantics/restrictedAccess
collection NDLTD
language Czech
format Doctoral Thesis
sources NDLTD
description This doctoral thesis deals with analysis of carrier dynamics in semiconductor nanocrystals and nanostructures by methods of ultrafast laser spectroscopy. In three chapters silicon, InAs/GaAs, InAs/AlAs and CdSSe materials are studied. Silicon nanocrystals prepared by sol-gel method were measured by time-resolved luminescence method with various time resolutions, two-photon absorption and Z-scan method. A model describing findings was suggested. InAs was well measured by upconversion method and gained knowledge appeared to be fully consistent with quantum model. CdSe material was examined in two basic forms - thin films of nanocrystals prepared by chemical deposition and nanocrystals in comercial filters. In both cases all questions regarding influencing optical properties of nanocrystals by modification of their growth were answered.
author2 Trojánek, František
author_facet Trojánek, František
Neudert, Karel
author Neudert, Karel
spellingShingle Neudert, Karel
Ultrarychlá laserová spektroskopie polovodičových nanostruktur
author_sort Neudert, Karel
title Ultrarychlá laserová spektroskopie polovodičových nanostruktur
title_short Ultrarychlá laserová spektroskopie polovodičových nanostruktur
title_full Ultrarychlá laserová spektroskopie polovodičových nanostruktur
title_fullStr Ultrarychlá laserová spektroskopie polovodičových nanostruktur
title_full_unstemmed Ultrarychlá laserová spektroskopie polovodičových nanostruktur
title_sort ultrarychlá laserová spektroskopie polovodičových nanostruktur
publishDate 2010
url http://www.nusl.cz/ntk/nusl-279171
work_keys_str_mv AT neudertkarel ultrarychlalaserovaspektroskopiepolovodicovychnanostruktur
AT neudertkarel ultrafastlaserspectroscopyofsemiconductornanostructures
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