Analysis of the physical mechanisms limiting performance and reliability of GaN based HEMTs

Analysis of the physical mechanisms limiting performance and reliability of GaN based HEMTs

Ce manuscrit présente les résultats d’une analyse exhaustive des mécanismes physiques qui limitent les performances et la fiabilité des transistors à haute mobilité d’électrons (HEMT) sur nitrure de gallium (GaN). En particulier : • Les phénomènes de dégradation à fort champ électrique des HEMT sur...

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Bibliographic Details
Main Author:	Faqir, Mustapha
Other Authors:	Bordeaux 1
Language:	en
Published:	2009
Subjects:	GaN HEMT Simulation physique Fiabilité Current collapse
Online Access:	http://www.theses.fr/2009BOR13773/document

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