Intégration des matériaux III-V antimoniures sur substrat de silicium

Intégration des matériaux III-V antimoniures sur substrat de silicium

Ce travail de thèse porte sur l'intégration par Epitaxie par Jets Moléculaires (EJM) de matériaux III-Sb sur substrat de silicium. Une étude bibliographique très détaillée a tout d'abord été menée afin de comprendre les enjeux et d'évaluer les différentes approches permettant de dimin...

Full description

Bibliographic Details
Main Author:	Madiomanana, Karine
Other Authors:	Montpellier
Language:	fr
Published:	2015
Subjects:	Epitaxie Antimoniures GaSb Intégration Silicium Mir Epitaxy Antimonides Integration Silicon
Online Access:	http://www.theses.fr/2015MONTS138/document

Similar Items

Laser telecom à base de GaSb. Intégration sur Silicium
by: Castellano, Andrea
Published: (2016)

Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices
by: Murray, Lee Michael
Published: (2012)

Nouvelles sources lasers à super réseau InAs/GaSb/InSb pour l'émission moyen infrarouge
by: Gassenq, Alban
Published: (2010)

Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy
by: Evgeniy Chusovitin, et al.
Published: (2018-11-01)

Sulfur Implanted GaSb for Non-Epitaxial Photovoltaic Devices
by: Herrera, Daniel
Published: (2019)

Preepitaxial substrate treatment of GaSb for liquid phase technology homoepitaxial growth
by: Andronova О. V., et al.
Published: (2008-12-01)

Lasers moyen infrarouge innovants pour analyse des hydrocarbures
by: Belahsene, Sofiane
Published: (2011)

Solving Series Resistance Problems In GaSb Thermophotovoltaics with Graphene and Other Approaches
by: Conlon, Benjamin Patrick
Published: (2017)

Next generation mid-wave infrared cascaded light emitting diodes: growth of broadband, multispectral, and single color devices on GaAs and integrated circuits
by: Provence, Sydney R.
Published: (2016)

Etude de l’incorporation de Bismuth lors de l’épitaxie par jets moléculaires de matériaux antimoniures
by: Delorme, Olivier
Published: (2019)

Investigations On Gallium Antimonide : An Optoelectronic Material
by: Dutta, Partha Sarathi
Published: (2013)

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations
by: Mansur Mohammed Ali Gamel, et al.
Published: (2021-08-01)

Characterization of Proton and Sulfur Implanted GaSb Photovoltaics and Materials
by: Karimi, Ebrahim
Published: (2021)

Intégration de matériaux III-V sur silicium nanostructuré pour application photovoltaïque
by: Molière, Timothée
Published: (2016)

Molecular beam epitaxial growth of rare-earth compounds for semimetal/semiconductor heterostructure optical devices
by: Crook, Adam Michael
Published: (2012)

Characterisation of Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer
by: Jonathan P. Hayton, et al.
Published: (2015-05-01)

On the Study of Dislocation Density in MBE GaSb-Based Structures
by: Agata Jasik, et al.
Published: (2020-11-01)

Comprendre et maîtriser le passage de type I à type II de puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur substrat de GaSb
by: Gélinas, Guillaume
Published: (2016)

Optical Properties of GaSb Nanofibers
by: Perez-Bergquist Alejandro, et al.
Published: (2011-01-01)

High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
by: Sang-Hyeon Kim, et al.
Published: (2021-01-01)

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
by: Balakrishnan G, et al.
Published: (2009-01-01)

III-V Heterostructure Nanowire Tunnel FETs
by: Erik Lind, et al.
Published: (2015-01-01)

Thermoelectrically-Cooled InAs/GaSb Type-II Superlattice Detectors as an Alternative to HgCdTe in a Real-Time Mid-Infrared Backscattering Spectroscopy System
by: Raphael Müller, et al.
Published: (2020-12-01)

Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture
by: E. A. Plis, et al.
Published: (2011-01-01)

Superréseaux InAs/GaSb réalisés par épitaxie par jets moléculaires pour photodétection à 300 K dans le moyen-infrarouge
by: Rodriguez, Jean-Baptiste
Published: (2005)

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si
by: Marina Baryshnikova, et al.
Published: (2020-04-01)

A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping
by: Iwona Sankowska, et al.
Published: (2021-08-01)

Effect of Hole Shift on Threshold Characteristics of GaSb-Based Double-Hole Photonic-Crystal Surface-Emitting Lasers
by: Yu-Hsun Huang, et al.
Published: (2021-04-01)

III-Sb-based solar cells and their integration on Si
by: Tournet, Julie
Published: (2019)

Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation
by: Muhammad Shaffatul Islam, et al.
Published: (2021-01-01)

Analyse des performances des photodiodes à superréseaux InAs/GaSb pour le moyen infrarouge
by: Delmas, Marie
Published: (2015)

Diodes laser tout cristal photonique émettant à 2,3 µm sur substrat GaSb
by: Adelin, Brice
Published: (2015)

Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers
by: Zong-Lin Li, et al.
Published: (2019-03-01)

Impact of Source to Drain Tunneling on the Ballistic Performance of Si, Ge, GaSb, and GeSn Nanowire p-MOSFETs
by: Dibakar Yadav, et al.
Published: (2020-01-01)

Selbstorganisierte Nanostrukturen auf Germanium und Galliumantimonid und ihre Nutzung als Template
by: Fritzsche, Monika
Published: (2014)

Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions
by: Yusuke Yanagida, et al.
Published: (2017-07-01)

Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition
by: Xianghai Ji, et al.
Published: (2017-06-01)

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array
by: Yan Teng, et al.
Published: (2021-01-01)

Material Properties of MBE Grown ZnTe, GaSb and Their Heterostructures for Optoelectronic Device Applications
Published: (2012)

Electronic materials : growth and characterisation
by: Grishin, Michael A.
Published: (2005)