Electrothermal characterization and nonlinear modelling of GaN transistors for telecommunication circuit design
This thesis starts showing the main characteristics and application fields of the AlGaN/GaN HEMT technology, focusing on reliability aspects essentially due to the presence of low frequency dispersive phenomena which limit in several ways the microwave performance of this kind of devices. Based on a...
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| Format: | Doctoral Thesis |
| Language: | en |
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Alma Mater Studiorum - Università di Bologna
2011
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| Online Access: | http://amsdottorato.unibo.it/3665/ |