Electrothermal characterization and nonlinear modelling of GaN transistors for telecommunication circuit design

This thesis starts showing the main characteristics and application fields of the AlGaN/GaN HEMT technology, focusing on reliability aspects essentially due to the presence of low frequency dispersive phenomena which limit in several ways the microwave performance of this kind of devices. Based on a...

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Bibliographic Details
Main Author: D’Angelo, Sara <1980>
Other Authors: Filicori, Fabio
Format: Doctoral Thesis
Language:en
Published: Alma Mater Studiorum - Università di Bologna 2011
Subjects:
Online Access:http://amsdottorato.unibo.it/3665/

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