Nanoscale-electrical and optical properties of iii-nitrides
III-nitrides are wide-band gap materials that have applications in both electronics and optoelectronic devices. Because to their inherent strong polarization properties, thermal stability and higher breakdown voltage in Al(Ga,In)N/GaN heterostructures, they have emerged as strong candidates for high...
Main Author: | Minj, Albert <1986> |
---|---|
Other Authors: | Cavallini, Anna |
Format: | Doctoral Thesis |
Language: | en |
Published: |
Alma Mater Studiorum - Università di Bologna
2013
|
Subjects: | |
Online Access: | http://amsdottorato.unibo.it/5193/ |
Similar Items
-
Transport Properties and Novel Sensing Applications of Organic Semiconducting Crystals
by: Ciavatti, Andrea <1986>
Published: (2015) -
Mg for hydrogen storage: synthesis, nanostructure and thermodynamics properties
by: Callini, Elsa <1982>
Published: (2011) -
Theory of plastic and elastic properties of graphite and silicon carbide
by: Savini, Gianluca <1972>
Published: (2007) -
Scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up
by: Carapezzi, Stefania <1970>
Published: (2014) -
Organic Bulk Heterojunction
Solar Cells: Materials Properties Device
Stability And Performance
by: Tessarolo, Marta <1985>
Published: (2016)