Scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up

Semiconductor nanowires (NWs) are one- or quasi one-dimensional systems whose physical properties are unique as compared to bulk materials because of their nanoscaled sizes. They bring together quantum world and semiconductor devices. NWs-based technologies may achieve an impact comparable to that o...

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Main Author: Carapezzi, Stefania <1970>
Other Authors: Cavallini, Anna
Format: Doctoral Thesis
Language:en
Published: Alma Mater Studiorum - Università di Bologna 2014
Subjects:
Online Access:http://amsdottorato.unibo.it/6222/
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spelling ndltd-unibo.it-oai-amsdottorato.cib.unibo.it-62222014-07-23T05:25:40Z Scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up Carapezzi, Stefania <1970> FIS/03 Fisica della materia Semiconductor nanowires (NWs) are one- or quasi one-dimensional systems whose physical properties are unique as compared to bulk materials because of their nanoscaled sizes. They bring together quantum world and semiconductor devices. NWs-based technologies may achieve an impact comparable to that of current microelectronic devices if new challenges will be faced. This thesis primarily focuses on two different, cutting-edge aspects of research over semiconductor NW arrays as pivotal components of NW-based devices. The first part deals with the characterization of electrically active defects in NWs. It has been elaborated the set-up of a general procedure which enables to employ Deep Level Transient Spectroscopy (DLTS) to probe NW arrays’ defects. This procedure has been applied to perform the characterization of a specific system, i.e. Reactive Ion Etched (RIE) silicon NW arrays-based Schottky barrier diodes. This study has allowed to shed light over how and if growth conditions introduce defects in RIE processed silicon NWs. The second part of this thesis concerns the bowing induced by electron beam and the subsequent clustering of gallium arsenide NWs. After a justified rejection of the mechanisms previously reported in literature, an original interpretation of the electron beam induced bending has been illustrated. Moreover, this thesis has successfully interpreted the formation of NW clusters in the framework of the lateral collapse of fibrillar structures. These latter are both idealized models and actual artificial structures used to study and to mimic the adhesion properties of natural surfaces in lizards and insects (Gecko effect). Our conclusion are that mechanical and surface properties of the NWs, together with the geometry of the NW arrays, play a key role in their post-growth alignment. The same parameters open, then, to the benign possibility of locally engineering NW arrays in micro- and macro-templates. Alma Mater Studiorum - Università di Bologna Cavallini, Anna 2014-03-24 Doctoral Thesis PeerReviewed application/pdf en http://amsdottorato.unibo.it/6222/ info:eu-repo/semantics/openAccess
collection NDLTD
language en
format Doctoral Thesis
sources NDLTD
topic FIS/03 Fisica della materia
spellingShingle FIS/03 Fisica della materia
Carapezzi, Stefania <1970>
Scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up
description Semiconductor nanowires (NWs) are one- or quasi one-dimensional systems whose physical properties are unique as compared to bulk materials because of their nanoscaled sizes. They bring together quantum world and semiconductor devices. NWs-based technologies may achieve an impact comparable to that of current microelectronic devices if new challenges will be faced. This thesis primarily focuses on two different, cutting-edge aspects of research over semiconductor NW arrays as pivotal components of NW-based devices. The first part deals with the characterization of electrically active defects in NWs. It has been elaborated the set-up of a general procedure which enables to employ Deep Level Transient Spectroscopy (DLTS) to probe NW arrays’ defects. This procedure has been applied to perform the characterization of a specific system, i.e. Reactive Ion Etched (RIE) silicon NW arrays-based Schottky barrier diodes. This study has allowed to shed light over how and if growth conditions introduce defects in RIE processed silicon NWs. The second part of this thesis concerns the bowing induced by electron beam and the subsequent clustering of gallium arsenide NWs. After a justified rejection of the mechanisms previously reported in literature, an original interpretation of the electron beam induced bending has been illustrated. Moreover, this thesis has successfully interpreted the formation of NW clusters in the framework of the lateral collapse of fibrillar structures. These latter are both idealized models and actual artificial structures used to study and to mimic the adhesion properties of natural surfaces in lizards and insects (Gecko effect). Our conclusion are that mechanical and surface properties of the NWs, together with the geometry of the NW arrays, play a key role in their post-growth alignment. The same parameters open, then, to the benign possibility of locally engineering NW arrays in micro- and macro-templates.
author2 Cavallini, Anna
author_facet Cavallini, Anna
Carapezzi, Stefania <1970>
author Carapezzi, Stefania <1970>
author_sort Carapezzi, Stefania <1970>
title Scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up
title_short Scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up
title_full Scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up
title_fullStr Scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up
title_full_unstemmed Scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up
title_sort scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up
publisher Alma Mater Studiorum - Università di Bologna
publishDate 2014
url http://amsdottorato.unibo.it/6222/
work_keys_str_mv AT carapezzistefania1970 scaleddownphysicalpropertiesofsemiconductornanowiresfornanoelectronicsscalingup
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