Nonlinear Absorption Techniques and Measurements in Semiconductors

We have conducted a detailed experimental and theoretical study of nonlinear absorption in semiconductors. Experimental measurements were made on a variety of materials at wavelengths of 1.06 and 0.53 microns using a picosecond Nd:YAG laser. Both two- and three-photon processes were investigated. Va...

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Main Author: Woodall, Milton Andrew
Other Authors: Van Stryland, Eric W.
Format: Others
Language:English
Published: North Texas State University 1985
Subjects:
Online Access:https://digital.library.unt.edu/ark:/67531/metadc331299/
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spelling ndltd-unt.edu-info-ark-67531-metadc3312992017-03-17T08:41:07Z Nonlinear Absorption Techniques and Measurements in Semiconductors Woodall, Milton Andrew nonlinear absorbtion semiconductors photon absoption Semiconductors -- Optical properties. Absorption. Nonlinear optics. We have conducted a detailed experimental and theoretical study of nonlinear absorption in semiconductors. Experimental measurements were made on a variety of materials at wavelengths of 1.06 and 0.53 microns using a picosecond Nd:YAG laser. Both two- and three-photon processes were investigated. Values of nonlinear absorption coefficients extracted from these measurements show excellent agreement with recent theory and scaling rules. Our theoretical investigation has been carried out for two-, three-,and n-photon absorption, for both continuous and pulsed sources. Expressions are obtained for the transmission of the sample in terms of the incident irradiance for each case. The physical interpretation of these results is discussed. We have also considered the effects of the photogenerated carriers on the measurements. Equations are developed that include linear absorption by these carriers. We have observed severe distortions on the transmitted beam, caused by changes in the refractive index of the material, due to the presence of these carriers. We present a model that accurately describes these effects in terms of the photogenerated carrier density. We have developed several novel techniques for monitoring nonlinear absorption. In particular, we have adapted the photoacoustic technique to the measurement of nonlinear absorption in semiconductors. We have also developed a technique employing irradiance modulation to greatly enhance the sensitivity to nonlinear processes and simultaneously discriminate against linear background signals. A related technique has been used to observe coherent mixing effects in semiconductors with cw, modelocked dye lasers. North Texas State University Van Stryland, Eric W. Soileau, M. J. Diels, Jean-Claude Sears, Raymond E. Redding, Rogers W. 1985-08 Thesis or Dissertation vii, 290 leaves: ill. Text local-cont-no: 1002715910-Woodall call-no: 379 N81d no.2414 oclc: 13741340 untcat: b1340088 https://digital.library.unt.edu/ark:/67531/metadc331299/ ark: ark:/67531/metadc331299 English Public Woodall, Milton Andrew Copyright Copyright is held by the author, unless otherwise noted. All rights reserved.
collection NDLTD
language English
format Others
sources NDLTD
topic nonlinear absorbtion
semiconductors
photon absoption
Semiconductors -- Optical properties.
Absorption.
Nonlinear optics.
spellingShingle nonlinear absorbtion
semiconductors
photon absoption
Semiconductors -- Optical properties.
Absorption.
Nonlinear optics.
Woodall, Milton Andrew
Nonlinear Absorption Techniques and Measurements in Semiconductors
description We have conducted a detailed experimental and theoretical study of nonlinear absorption in semiconductors. Experimental measurements were made on a variety of materials at wavelengths of 1.06 and 0.53 microns using a picosecond Nd:YAG laser. Both two- and three-photon processes were investigated. Values of nonlinear absorption coefficients extracted from these measurements show excellent agreement with recent theory and scaling rules. Our theoretical investigation has been carried out for two-, three-,and n-photon absorption, for both continuous and pulsed sources. Expressions are obtained for the transmission of the sample in terms of the incident irradiance for each case. The physical interpretation of these results is discussed. We have also considered the effects of the photogenerated carriers on the measurements. Equations are developed that include linear absorption by these carriers. We have observed severe distortions on the transmitted beam, caused by changes in the refractive index of the material, due to the presence of these carriers. We present a model that accurately describes these effects in terms of the photogenerated carrier density. We have developed several novel techniques for monitoring nonlinear absorption. In particular, we have adapted the photoacoustic technique to the measurement of nonlinear absorption in semiconductors. We have also developed a technique employing irradiance modulation to greatly enhance the sensitivity to nonlinear processes and simultaneously discriminate against linear background signals. A related technique has been used to observe coherent mixing effects in semiconductors with cw, modelocked dye lasers.
author2 Van Stryland, Eric W.
author_facet Van Stryland, Eric W.
Woodall, Milton Andrew
author Woodall, Milton Andrew
author_sort Woodall, Milton Andrew
title Nonlinear Absorption Techniques and Measurements in Semiconductors
title_short Nonlinear Absorption Techniques and Measurements in Semiconductors
title_full Nonlinear Absorption Techniques and Measurements in Semiconductors
title_fullStr Nonlinear Absorption Techniques and Measurements in Semiconductors
title_full_unstemmed Nonlinear Absorption Techniques and Measurements in Semiconductors
title_sort nonlinear absorption techniques and measurements in semiconductors
publisher North Texas State University
publishDate 1985
url https://digital.library.unt.edu/ark:/67531/metadc331299/
work_keys_str_mv AT woodallmiltonandrew nonlinearabsorptiontechniquesandmeasurementsinsemiconductors
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