Technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors

Technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors

The development of the conductivity coefficients is reviewed for both highly degenerate metals, having an energy dependent relaxation time, and semiconductors, obeying Boltzmann statistics and having a relaxation time varying as the energy to the λ power.

Bibliographic Details
Main Author: Rater, Lonnie M.
Format: Others
Language:English
Published: North Texas State University 1975
Subjects:
electric conductivity
semiconductors
hall effect
Online Access:https://digital.library.unt.edu/ark:/67531/metadc332835/
id ndltd-unt.edu-info-ark-67531-metadc332835
record_format oai_dc
spelling ndltd-unt.edu-info-ark-67531-metadc3328352019-03-21T05:53:49Z Technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors Rater, Lonnie M. electric conductivity semiconductors hall effect The development of the conductivity coefficients is reviewed for both highly degenerate metals, having an energy dependent relaxation time, and semiconductors, obeying Boltzmann statistics and having a relaxation time varying as the energy to the λ power. North Texas State University 1975-12 Thesis or Dissertation Text local-cont-no: 1002784278-Rater https://digital.library.unt.edu/ark:/67531/metadc332835/ ark: ark:/67531/metadc332835 English Public Rater, Lonnie M. Copyright Copyright is held by the author, unless otherwise noted. All rights reserved.
collection NDLTD
language English
format Others
sources NDLTD
topic electric conductivity
semiconductors
hall effect
spellingShingle electric conductivity
semiconductors
hall effect
Rater, Lonnie M.
Technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors
description The development of the conductivity coefficients is reviewed for both highly degenerate metals, having an energy dependent relaxation time, and semiconductors, obeying Boltzmann statistics and having a relaxation time varying as the energy to the λ power.
author Rater, Lonnie M.
author_facet Rater, Lonnie M.
author_sort Rater, Lonnie M.
title Technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors
title_short Technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors
title_full Technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors
title_fullStr Technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors
title_full_unstemmed Technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors
title_sort technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors
publisher North Texas State University
publishDate 1975
url https://digital.library.unt.edu/ark:/67531/metadc332835/
work_keys_str_mv AT raterlonniem techniqueforseparationofcarrierdensitiesandmobilitiesinhighlynondegeneratemultibandsemiconductors
_version_ 1719004922275430400

Similar Items