Technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors
The development of the conductivity coefficients is reviewed for both highly degenerate metals, having an energy dependent relaxation time, and semiconductors, obeying Boltzmann statistics and having a relaxation time varying as the energy to the λ power.
Main Author: | Rater, Lonnie M. |
---|---|
Format: | Others |
Language: | English |
Published: |
North Texas State University
1975
|
Subjects: | |
Online Access: | https://digital.library.unt.edu/ark:/67531/metadc332835/ |
Similar Items
-
A problem related to the hall effect in a semiconductor with an
electrode of an arbitrary shape
by: P. A. Krutitskii, et al.
Published: (1999-01-01) -
A problem related to the hall effect in a semiconductor with an electrode of an arbitrary shape
by: Krutitskii P. A., et al.
Published: (1999-01-01) -
Carrier-dependent quadratic scaling of anomalous Hall conductivity in ferromagnetic semiconductor
by: Maoxiang Fu, et al.
Published: (2021-10-01) -
Magnetoresistance based determination of basic parameters of minority charge carriers in solid matter
by: Y.O. Uhryn, et al.
Published: (2017-12-01) -
Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy
by: Guthrie, Daniel K.
Published: (2007)