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01899nam a2200373Ia 4500 |
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0.3390-mi13040497 |
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220421s2022 CNT 000 0 und d |
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|a 2072666X (ISSN)
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| 245 |
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|a Wideband Doherty Power Amplifier: A Design Approach
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|b MDPI
|c 2022
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| 856 |
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|z View Fulltext in Publisher
|u https://doi.org/10.3390/mi13040497
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|a This paper presents a simple method to design wideband Doherty power amplifiers (DPAs) based on the synthesis of a combiner network which can mimic the response of an ideal compensation of the device reactive output equivalent network and exploit the maximum power capabilities of the device. Using the Wolfspeed’s CGH40006 and CG2H40025 GaN HEMT devices, two DPAs were designed and simulated to demonstrate the effectiveness of the proposed approach. In both cases, a 1.4 GHz bandwidth was obtained together with an efficiency higher than 44 and 49% at 6 dB OBO. The saturated output power was higher than 41.2 and 47 dBm over the band, for the DPAs using the CGH40006 and CG2H40025 devices, respectively. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.
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|a Broadband amplifiers
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|a broadband matching networks
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|a Broadband matching networks
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|a Design
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|a Design approaches
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|a Doherty amplifiers
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|a Doherty power amplifier
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|a Equivalent network
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|a Gallium nitride
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|a GaN based
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|a GaN-based FET
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|a GaN-based FETs
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|a III-V semiconductors
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|a Maximum power
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|a SIMPLE method
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|a Wide-band
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|a wideband Doherty power amplifier
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|a Wideband doherty power amplifier
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|a Angarita Malaver, E.F.
|e author
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|a Lara González, L.Á.
|e author
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|a Moreno Rubio, J.J.
|e author
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| 773 |
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|t Micromachines
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