Enhanced Photoluminescence and Electrical Properties of n-Al-Doped ZnO Nanorods/p-B-Doped Diamond Heterojunction

• Main Authors: Fan, J. (Author), Sang, D. (Author), Wang, L. (Author), Wang, Q. (Author), Wang, X. (Author), Yao, Y. (Author), Yin, J. (Author), Zhang, D. (Author), Zou, L. (Author)
• Format: Article
• Language: English
• Published: NLM (Medline) 2022
• Subjects: aluminum-doped ZnO NRs; B-doped diamond; diamond; Diamond; electrical transport behavior; heterojunction; nanotube; Nanotubes; photoluminescence; semiconductor; Semiconductors; zinc oxide; Zinc Oxide
• Online Access: View Fulltext in Publisher
• ISBN: 14220067 (ISSN)
• DOI: 10.3390/ijms23073831

The hydrothermal approach has been used to fabricate a heterojunction of n-aluminum-doped ZnO nanorods/p-B-doped diamond (n-Al:ZnO NRs/p-BDD). It exhibits a significant increase in photoluminescence (PL) intensity and a blue shift of the UV emission peak when compared to the n-ZnO NRs/p-BDD heterojunction. The current voltage (I-V) characteristics exhibit excellent rectifying behavior with a high rectification ratio of 838 at 5 V. The n-Al:ZnO NRs/p-BDD heterojunction shows a minimum turn-on voltage (0.27 V) and reverse leakage current (0.077 μA). The forward current of the n-Al:ZnO NRs/p-BDD heterojunction is more than 1300 times than that of the n-ZnO NRs/p-BDD heterojunction at 5 V. The ideality factor and the barrier height of the Al-doped device were found to decrease. The electrical transport behavior and carrier injection process of the n-Al:ZnO NRs/p-BDD heterojunction were analyzed through the equilibrium energy band diagrams and semiconductor theoretical models.