Enhanced Photoluminescence and Electrical Properties of n-Al-Doped ZnO Nanorods/p-B-Doped Diamond Heterojunction
The hydrothermal approach has been used to fabricate a heterojunction of n-aluminum-doped ZnO nanorods/p-B-doped diamond (n-Al:ZnO NRs/p-BDD). It exhibits a significant increase in photoluminescence (PL) intensity and a blue shift of the UV emission peak when compared to the n-ZnO NRs/p-BDD heteroju...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
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NLM (Medline)
2022
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Subjects: | |
Online Access: | View Fulltext in Publisher |
LEADER | 02177nam a2200397Ia 4500 | ||
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001 | 10-3390-ijms23073831 | ||
008 | 220425s2022 CNT 000 0 und d | ||
020 | |a 14220067 (ISSN) | ||
245 | 1 | 0 | |a Enhanced Photoluminescence and Electrical Properties of n-Al-Doped ZnO Nanorods/p-B-Doped Diamond Heterojunction |
260 | 0 | |b NLM (Medline) |c 2022 | |
856 | |z View Fulltext in Publisher |u https://doi.org/10.3390/ijms23073831 | ||
520 | 3 | |a The hydrothermal approach has been used to fabricate a heterojunction of n-aluminum-doped ZnO nanorods/p-B-doped diamond (n-Al:ZnO NRs/p-BDD). It exhibits a significant increase in photoluminescence (PL) intensity and a blue shift of the UV emission peak when compared to the n-ZnO NRs/p-BDD heterojunction. The current voltage (I-V) characteristics exhibit excellent rectifying behavior with a high rectification ratio of 838 at 5 V. The n-Al:ZnO NRs/p-BDD heterojunction shows a minimum turn-on voltage (0.27 V) and reverse leakage current (0.077 μA). The forward current of the n-Al:ZnO NRs/p-BDD heterojunction is more than 1300 times than that of the n-ZnO NRs/p-BDD heterojunction at 5 V. The ideality factor and the barrier height of the Al-doped device were found to decrease. The electrical transport behavior and carrier injection process of the n-Al:ZnO NRs/p-BDD heterojunction were analyzed through the equilibrium energy band diagrams and semiconductor theoretical models. | |
650 | 0 | 4 | |a aluminum-doped ZnO NRs |
650 | 0 | 4 | |a B-doped diamond |
650 | 0 | 4 | |a diamond |
650 | 0 | 4 | |a Diamond |
650 | 0 | 4 | |a electrical transport behavior |
650 | 0 | 4 | |a heterojunction |
650 | 0 | 4 | |a nanotube |
650 | 0 | 4 | |a Nanotubes |
650 | 0 | 4 | |a photoluminescence |
650 | 0 | 4 | |a semiconductor |
650 | 0 | 4 | |a Semiconductors |
650 | 0 | 4 | |a zinc oxide |
650 | 0 | 4 | |a Zinc Oxide |
700 | 1 | |a Fan, J. |e author | |
700 | 1 | |a Sang, D. |e author | |
700 | 1 | |a Wang, L. |e author | |
700 | 1 | |a Wang, Q. |e author | |
700 | 1 | |a Wang, Q. |e author | |
700 | 1 | |a Wang, X. |e author | |
700 | 1 | |a Yao, Y. |e author | |
700 | 1 | |a Yin, J. |e author | |
700 | 1 | |a Zhang, D. |e author | |
700 | 1 | |a Zou, L. |e author | |
773 | |t International journal of molecular sciences |