Self-heating effect in Silicon-Photomultipliers

The main effect of radiation damage in a Silicon-Photomultiplier (SiPM) is a dramatic increase in the dark current. The power dissipated, if not properly cooled, heats the SiPM, whose performance parameters depend on temperature. Heating studies were performed with a KETEK SiPM, glued on an Al2O3 su...

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Bibliographic Details
Main Authors: Garutti, E. (Author), Klanner, R. (Author), Martens, S. (Author), Popova, E. (Author), Schwandt, J. (Author), Villalba, C. (Author)
Format: Article
Language:English
Published: Elsevier B.V. 2022
Subjects:
Online Access:View Fulltext in Publisher
LEADER 02294nam a2200397Ia 4500
001 10.1016-j.nima.2022.167026
008 220718s2022 CNT 000 0 und d
020 |a 01689002 (ISSN) 
245 1 0 |a Self-heating effect in Silicon-Photomultipliers 
260 0 |b Elsevier B.V.  |c 2022 
856 |z View Fulltext in Publisher  |u https://doi.org/10.1016/j.nima.2022.167026 
520 3 |a The main effect of radiation damage in a Silicon-Photomultiplier (SiPM) is a dramatic increase in the dark current. The power dissipated, if not properly cooled, heats the SiPM, whose performance parameters depend on temperature. Heating studies were performed with a KETEK SiPM, glued on an Al2O3 substrate, which is either directly connected to the temperature-controlled chuck of a probe station, or through layers of material with well-known thermal resistance. The SiPM is illuminated by a LED operated in DC-mode. The SiPM current is measured and used to determine the steady-state temperature as a function of power dissipated in the multiplication region of the SiPM and thermal resistance, as well as the time dependencies for heating and cooling. This information can be used to correct the parameters determined for radiation-damaged SiPM for the effects of self-heating. The method can also be employed for packaged SiPMs with unknown thermal contact to a heat sink. The results presented in this paper are preliminary. © 2022 Elsevier B.V. 
650 0 4 |a Alumina 
650 0 4 |a Aluminum oxide 
650 0 4 |a 'current 
650 0 4 |a DC mode 
650 0 4 |a Heating 
650 0 4 |a Layer of material 
650 0 4 |a Main effect 
650 0 4 |a Performance parameters 
650 0 4 |a Photomultipliers 
650 0 4 |a Power 
650 0 4 |a Probe stations 
650 0 4 |a Radiation damage 
650 0 4 |a Self-heating 
650 0 4 |a Self-heating effect 
650 0 4 |a Silicon 
650 0 4 |a Silicon photo multipliers (SiPM) 
650 0 4 |a Silicon Photomultiplier 
700 1 |a Garutti, E.  |e author 
700 1 |a Klanner, R.  |e author 
700 1 |a Martens, S.  |e author 
700 1 |a Popova, E.  |e author 
700 1 |a Schwandt, J.  |e author 
700 1 |a Villalba, C.  |e author 
773 |t Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment