Effect of annealing time on memristive behavior of sol-gel spincoated ZnO-based memristive device

This work focuses on the memristive behaviour of zinc oxide-based memristive device that was prepared by sol-gel spin coating technique to deposit ZnO. The substrate used is ITO as the bottom electrode. The top electrode is platinum. The deposited thin films were; one non-annealed sample and the res...

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Bibliographic Details
Main Authors: Abdullah M.H.R.O (Author), Bashar N.A.M (Author), Herman, S.H (Author), Min Y.H (Author), Nasir S.M.F.S.A (Author), Sauki, N.S.M (Author), Shaari, N.A.A (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc. 2016
Online Access:View Fulltext in Publisher
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