Investigation on the structural characterization of pulsed p-type porous silicon

Investigation on the structural characterization of pulsed p-type porous silicon

P-type Porous silicon (PS) was sucessfully formed by using an electrochemical pulse etching (PC) and conventional direct current (DC) etching techniques. The PS was etched in the Hydrofluoric (HF) based solution at a current density of J = 10 mA/cm2 for 30 minutes from a crystalline silicon wafer wi...

Full description

Bibliographic Details
Main Authors: Abdullah M.H.R.O (Author), Ali M.N.M (Author), Bermakai M. (Author), Hussain Z. (Author), Ibrahim A. (Author), Jamalludin D. (Author), Jumidali M.M (Author), Mahmood A. (Author), Mahmood, A. (Author), Mukhtar N.M (Author), Rahim, A.F.A (Author), Wahab, N.H.A (Author), Yusof A.M (Author), Yusof, Y. (Author), Yusoff M.Z.M (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc. 2017
Online Access:View Fulltext in Publisher
View in Scopus

Similar Items

Similar Items