Quantum information processing with integrated silicon carbide photonics

• Main Authors: Majety, S. (Author), Norman, V.A (Author), Radulaski, M. (Author), Saha, P. (Author)
• Format: Article
• Language: English
• Published: American Institute of Physics Inc. 2022
• Subjects: Coherence time; Color centers; Colour centers; Optical-; Optical properties; Photonic devices; Photonics devices; Property; Quantum entanglement; Quantum information processing; Quantum optics; Quantum technologies; Silicon carbide; Silicon photonics; Silicon wafers; Spin entanglement; Spin-spin; Wide band gap semiconductors; Wide-band-gap semiconductor
• Online Access: View Fulltext in Publisher

 Color centers in wide bandgap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, and spin-photon and spin-spin entanglement, as well as the potential for scalability. Silicon carbide color centers integrated into photonic devices span a wide range of applications in quantum information processing in a material platform with quantum-grade wafer availability and advanced processing capabilities. Recent progress in emitter generation and characterization, nanofabrication, device design, and quantum optical studies has amplified the scientific interest in this platform. We provide a conceptual and quantitative analysis of the role of silicon carbide integrated photonics in three key application areas: quantum networking, simulation, and computing. © 2022 Author(s).