Participation of nitrogen impurities in the growth of grown-in oxide precipitates in nitrogen-doped Czochralski silicon
For nitrogen-doped Czochralski (NCZ) silicon, it is well known that nitrogen (N) and oxygen (O) impurities can interact to form nitrogen-oxygen shallow thermal donors (N-O STDs); moreover, the N impurities can be involved into heterogeneous nucleation to facilitate the formation of grown-in oxide pr...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics Inc.
2022
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| Subjects: | |
| Online Access: | View Fulltext in Publisher |