Participation of nitrogen impurities in the growth of grown-in oxide precipitates in nitrogen-doped Czochralski silicon
For nitrogen-doped Czochralski (NCZ) silicon, it is well known that nitrogen (N) and oxygen (O) impurities can interact to form nitrogen-oxygen shallow thermal donors (N-O STDs); moreover, the N impurities can be involved into heterogeneous nucleation to facilitate the formation of grown-in oxide pr...
Main Authors: | Lan, W. (Author), Ma, X. (Author), Wu, D. (Author), Yang, D. (Author), Zhao, T. (Author) |
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Format: | Article |
Language: | English |
Published: |
American Institute of Physics Inc.
2022
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Subjects: | |
Online Access: | View Fulltext in Publisher |
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