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02781nam a2200457Ia 4500 |
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10.1063-5.0084342 |
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220510s2022 CNT 000 0 und d |
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|a 2166532X (ISSN)
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|a New magnetic intermediate state, "B - phase," in the cubic chiral magnet MnSi
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|b American Institute of Physics Inc.
|c 2022
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|z View Fulltext in Publisher
|u https://doi.org/10.1063/5.0084342
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|a It is well known that the archetype chiral magnet MnSi stabilizes a skyrmion lattice, termed "A-phase,"in a narrow temperature range in the vicinity of the paramagnetic boundary around Tc ∼29 K and Hc ∼2 kOe. Recently, it has been predicted that at much lower temperatures below Tc, the conical helicoid and the forced ferromagnetic (FFM) states could be separated by a new "unknown state."In order to detect this "unknown state,"we explored the phase diagram of MnSi oriented single crystals as a function of the d.c. magnetic field (H - dc) and the temperature (T) by using a.c. magnetization measurements. For H - dc∥ 〈111〉, we observed a new region, termed "B-phase,"in the magnetic phase diagram, characterized by a flat-valley-like anomaly on the in-phase component of the a.c. magnetization (m′), over 3.5 ≤ Hdc ≤ 6.2 kOe just below the low temperature (T < 6 K) FFM boundary. The observed frequency independence over 0.3-1000 Hz and the absence of any measurable absorption in the a.c. magnetization (m″) in the "B-phase"suggest a static nature. The "B-phase"was not observed for either H - dc∥ 〈100〉 or 〈110〉, revealing that the magnetic anisotropy could play a role in the stabilization of the phase. The "B-phase"could be compatible with the theoretical predictions if the new magnetic state is supposedly related with a relative reorientation of the four helices in MnSi. © 2022 Author(s).
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|a AC magnetization
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|a B phase
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|a Chiral magnets
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|a DC magnetic field
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|a Ferromagnetic state
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|a Intermediate state
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|a Lows-temperatures
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|a Magnetic anisotropy
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|a Magnetization
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|a Magnets
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|a Manganese compounds
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|a Narrow temperature ranges
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|a Phase diagrams
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|a Silicon compounds
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|a Single crystals
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|a Skyrmion lattices
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|a Temperature
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|a Unknown state
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|a Akimitsu, J.
|e author
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|a Campo, J.
|e author
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|a Inoue, K.
|e author
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|a Iwasaki, S.
|e author
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|a Kousaka, Y.
|e author
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|a Laliena, V.
|e author
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|a Mito, M.
|e author
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|a Ohishi, K.
|e author
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|a Ohkuma, M.
|e author
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|a Pardo, M.
|e author
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|t APL Materials
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