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02684nam a2200421Ia 4500 |
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10.1063-5.0085274 |
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|a 00218979 (ISSN)
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|a Full matrix electromechanical properties of textured Pb(In1/2Nb1/2)O3-Pb(Sc1/2Nb1/2)O3-PbTiO3ceramic
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|b American Institute of Physics Inc.
|c 2022
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|z View Fulltext in Publisher
|u https://doi.org/10.1063/5.0085274
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|a Textured relaxor-PbTiO3 (PT) ceramics possess advantages of crystal-like properties, high composition homogeneity, and low cost, and have, thus, received considerable attention from the piezoelectric community. To promote the applications of textured relaxor-PT ceramics, here we characterize the full electromechanical parameters (elastic, dielectric, and piezoelectric coefficients) and the frequency dependence of the coercive field (EC) for the recently reported textured Pb(In1/2Nb1/2)O3-Pb(Sc1/2Nb1/2)O3-PbTiO3 (PIN-PSN-PT) ceramic. Our results show that the textured PIN-PSN-PT ceramic possesses high piezoelectric coefficients (d31 = -365 pC N-1, d33 = 770 pC N-1, and g33 = 40.4 × 10-3 m2 C-1) and electromechanical coupling factors (k33 = 87% and kp = 82%), far outperforming those of the commercial ceramic PZT-5H (d31 = -274 pC N-1, d33 = 593 pC N-1, g33 = 1.97 × 10-2 m2 C-1, k33 = 75%, and kp = 65%). In addition, the textured PIN-PSN-PT ceramic exhibits lower dielectric constants (ɛ33S = 478) compared with PZT-5H and relaxor-PT crystals, which can greatly promote the sensitivity of receiving transducers. Moreover, the textured PIN-PSN-PT ceramic with a high Tr-t (172 °C) shows better thermal stability compared to commercial relaxor-PT crystals (Tr-t < 130 °C). The results presented here will benefit the development of piezoelectric devices made of textured ceramics. © 2022 Author(s).
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|a Composition homogeneity
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|a Crystallography
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|a Crystals
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|a Elastic coefficient
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|a Electromechanical coupling
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|a Electromechanical parameters
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|a Electromechanical property
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|a Full matrixes
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|a Lead titanate
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|a Low-costs
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|a Piezoelectric
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|a Piezoelectric coefficient
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|a Piezoelectricity
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|a Property
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|a Relaxors
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|a Textures
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|a Gao, X.
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|a Li, F.
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|a Li, J.
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|a Qiao, L.
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|a Wang, J.
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|a Wang, M.
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|a Wu, J.
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|a Xu, Z.
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|a Yang, S.
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|t Journal of Applied Physics
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