Study of Reduced Graphene Oxide for Trench Schottky Diode

• Main Authors: Abdullah, W.F.H (Author), Herman S.H (Author), Hussin, M.R.M (Author), Khairir, N.S (Author), Nasir, I.M (Author), Sabirin Zoolfakar, A. (Author), Uz-Zaman, A.S.M.M (Author)
• Format: Article
• Language: English
• Published: Institute of Physics Publishing 2015
• Subjects: Break down voltage; Carbon; Chemical exfoliations; Conventional metals; Diodes; Electronic equipment; Graphene; Low turn-on voltages; Nanostructured carbons; Reduced graphene oxides; Reduced graphene oxides (RGO); Schottky barrier diodes; Schottky contacts; Thermoelectric equipment
• Online Access: View Fulltext in Publisher; View in Scopus

 This paper presents the study of reduced Graphene Oxide (RGO) for trench Schottky diode by replacing conventional metal layer that forms schottky contact with a nanostructured carbon thin film via Reduced Graphene Oxide (RGO) technique. The RGO was synthesis by chemical exfoliation in which modified Hummer's method was approached. It was then deposited on the trench schottky pattern substrate by pressurized spray coating. The sample was then characterized by FESEM, Raman Spectroscopy and I-V test. The results of FESEM and Raman showed good characteristics and well deposited nanostructures of RGO flakes. The two-point I-V test showed that the samples have a low turn-on voltage and a higher break-down voltage, which is better than the conventional schottky diode used in the market. © Published under licence by IOP Publishing Ltd.