Dielectric and structural properties of poly(vinylidene fluoride) (PVDF) and poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) filled with magnesium oxide nanofillers

• Main Authors: Arshad, A.N (Author), Majid, W.H.A (Author), Rozana, M.D (Author), Rusop, M. (Author), Subban, R.H.Y (Author), Wahid, M.H.M (Author)
• Format: Article
• Language: English
• Published: Hindawi Limited 2019
• Subjects: Dielectric losses; Dielectric materials; Dielectric properties; Electronic device; Fluorine compounds; Fourier transform infrared spectroscopy; High dielectric constants; Low dielectric loss; Magnesia; Metal insulator boundaries; Metal insulator metals; MIM devices; Nanocomposite films; Nanocomposite thin films; Poly (vinylidene fluoride)(PVDF); Poly(vinylidene fluoride-trifluoroethylene); Thin films; Weight percentages
• Online Access: View Fulltext in Publisher; View in Scopus
• ISBN: 16874110 (ISSN)
• ISSN: 16874110 (ISSN)
• DOI: 10.1155/2019/5961563

This study examines the dielectric properties of filled PVDF film and filled PVDF-TrFE film incorporated with 1, 3, 5, and 7 weight percentages of magnesium oxide (MgO) nanofillers. The metal-insulator-metal (MIM) configuration demonstrates PVDF/MgO with 7 weight percent of MgO which produced high dielectric constant (1 kHz) with low dielectric loss. The ATR-FTIR spectra of PVDF/MgO (7%) indicate wide bonding peaks at 840 cm-1 and 880 cm-1, assigned to -CH2 and -CF2 groups, respectively. This implies the presence of high content of β-crystals in the PVDF/MgO (7%) film. A shift in the peak was observed in the same film, from 1170 cm-1 to 1180 cm-1 suggesting possible transformation from γ-crystals to β-crystals. This film showed no apparent defect on its film surface. Thus, it established that PVDF incorporated with 7% MgO can be used to produce nanocomposite thin film for low-frequency electronic devices. Copyright © 2019 A. N. Arshad et al. This is an open access article distributed under the Creative Commons Attribution License