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02552nam a2200553Ia 4500 |
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10.1364-OE.459704 |
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220510s2022 CNT 000 0 und d |
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|a 10944087 (ISSN)
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|a Diode-pumped mode-locked Yb:BaF2 laser
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|b Optica Publishing Group (formerly OSA)
|c 2022
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| 856 |
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|z View Fulltext in Publisher
|u https://doi.org/10.1364/OE.459704
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|a We report on a continuous-wave (CW) and passively mode-locked operation of a fluorite-type Yb:BaF2 crystal. Pumped with a spatially single-mode, fiber-coupled InGaAs laser diode at 976 nm, the Yb:BaF2 laser generated a maximum CW output power of 512 mW at 1054.4 nm, corresponding to a laser threshold of 36.5 mW and a slope efficiency of 65.0%. A continuous wavelength tuning across 85 nm (1007–1092 nm) was achieved. By implementing a semiconductor saturable absorber mirror for initiating and sustaining the soliton pulse shaping, near Fourier-transform-limited pulses as short as 52 fs were generated at 1058.2 nm with an average output power of 129 mW at a pulse repetition rate of ∼79.5 MHz. To the best of our knowledge, this is the first report on the passively mode-locked operation of the Yb:BaF2 crystal. © 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
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|a BaF 2 crystal
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|a Barium compounds
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|a Calcium fluoride
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|a Continuous Wave
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|a Continuous wave output power
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|a Diode-pumped
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|a Fiber coupled
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|a Fluorite types
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|a Fluorspar
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|a Gallium alloys
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|a Indium alloys
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|a Mode locked operations
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|a Mode-locked
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|a Mode-locked fiber lasers
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|a Passive mode locking
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|a Passively mode-locked
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|a Pulse repetition rate
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|a Pumping (laser)
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|a Semiconducting indium gallium arsenide
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|a Semiconductor alloys
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|a Semiconductor diodes
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|a Semiconductor lasers
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|a Single-mode fibers
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|a Solid state lasers
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|a Basyrova, L.
|e author
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|a Benayad, A.
|e author
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|a Camy, P.
|e author
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1 |
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|a Chen, W.
|e author
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1 |
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|a Lin, Z.-L.
|e author
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1 |
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|a Loiko, P.
|e author
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1 |
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|a Mateos, X.
|e author
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1 |
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|a Petrov, V.
|e author
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1 |
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|a Wang, L.
|e author
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1 |
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|a Xue, W.-Z.
|e author
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|a Zeng, H.-J.
|e author
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|a Zhang, G.
|e author
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| 773 |
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|t Optics Express
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