Ultrafast Terahertz Complex Conductivity Dynamics of Layered MoS2 Crystal Probed by Time-Resolved Terahertz Spectroscopy

Ultrafast carrier dynamics, including the carrier photoexcitation and relaxation processes, plays an essential role in improving the performance of molybdenum disulfide (MoS2)-based optoelectronic devices. Herein, we investigate the photo-generated carrier dynamics in layered MoS2 crystal using a ti...

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Bibliographic Details
Main Authors: He, C. (Author), Huang, Y. (Author), Xu, X. (Author), Yang, Y. (Author), Zhou, Y. (Author), Zhu, L. (Author)
Format: Article
Language:English
Published: Frontiers Media S.A. 2021
Subjects:
Online Access:View Fulltext in Publisher
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001 10.3389-fphy.2021.764122
008 220427s2021 CNT 000 0 und d
020 |a 2296424X (ISSN) 
245 1 0 |a Ultrafast Terahertz Complex Conductivity Dynamics of Layered MoS2 Crystal Probed by Time-Resolved Terahertz Spectroscopy 
260 0 |b Frontiers Media S.A.  |c 2021 
856 |z View Fulltext in Publisher  |u https://doi.org/10.3389/fphy.2021.764122 
520 3 |a Ultrafast carrier dynamics, including the carrier photoexcitation and relaxation processes, plays an essential role in improving the performance of molybdenum disulfide (MoS2)-based optoelectronic devices. Herein, we investigate the photo-generated carrier dynamics in layered MoS2 crystal using a time-resolved terahertz (THz) spectroscopy. We have analyzed the ultrafast changes of the THz complex photoconductivity deduced from the peak and zero-crossing of THz waveforms. The decay time of the real part of the THz photoconductivity in layered MoS2 crystal is independent with the pump power, while the imaginary part increases with the pump power. We attribute the decay time of the real part to the carrier recombination process via phonon-assistance and the decay time of the imaginary part to the defect-assisted exciton recombination. The peak values of the complex photoconductivity show a trend of saturation with the increase of the pump power because of the many-body effect at high carrier concentration. This work deepens the understanding of the basic ultrafast physical process in MoS2 crystal, which is enlightening for the design of novel optoelectronic devices. Copyright © 2021 Yang, He, Huang, Zhu, Zhou and Xu. 
650 0 4 |a exciton dynamics 
650 0 4 |a layered MoS2 crystal 
650 0 4 |a terahertz photoconductivity 
650 0 4 |a time-resolved terahertz spectroscopy 
650 0 4 |a ultrafast carrier dynamics 
700 1 |a He, C.  |e author 
700 1 |a Huang, Y.  |e author 
700 1 |a Xu, X.  |e author 
700 1 |a Yang, Y.  |e author 
700 1 |a Zhou, Y.  |e author 
700 1 |a Zhu, L.  |e author 
773 |t Frontiers in Physics