Synthesis of AlN Nanowires by Al-Sn Flux Method

Synthesis of AlN Nanowires by Al-Sn Flux Method

This paper presents a recent study on the synthesis of AlN nanowires. AlN nanowires were successfully prepared on sapphire substrate by the Al-Sn flux method. The obtained nanowires were hundreds of nanometers in diameter and tens of microns in length. The results of transmission electron microscopy...

Full description

Bibliographic Details
Main Authors: Chen, J. (Author), Hu, Z. (Author), Li, L. (Author), Ma, W. (Author), Mu, H. (Author), Qi, X. (Author), Xu, Y. (Author), Yu, Y. (Author)
Format: Article
Language:English
Published: MDPI 2022
Subjects:
AlN
flux method
nanowires
optical properties
Online Access:View Fulltext in Publisher
Description
Summary:This paper presents a recent study on the synthesis of AlN nanowires. AlN nanowires were successfully prepared on sapphire substrate by the Al-Sn flux method. The obtained nanowires were hundreds of nanometers in diameter and tens of microns in length. The results of transmission electron microscopy (TEM) show that the growth direction of AlN nanowires was perpendicular to the C axis. The photoluminescence (PL) spectrum of AlN nanowires shows a broad peak, which is ascribed to the defect levels in the AlN bandgap. This work provides a novel method for growing AlN nanowires, which offers a potential material for the application of photoelectron devices. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.
ISBN:20734352 (ISSN)
DOI:10.3390/cryst12040516

Similar Items