Synthesis of AlN Nanowires by Al-Sn Flux Method
This paper presents a recent study on the synthesis of AlN nanowires. AlN nanowires were successfully prepared on sapphire substrate by the Al-Sn flux method. The obtained nanowires were hundreds of nanometers in diameter and tens of microns in length. The results of transmission electron microscopy...
Main Authors: | , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI
2022
|
Subjects: | |
Online Access: | View Fulltext in Publisher |
LEADER | 01438nam a2200265Ia 4500 | ||
---|---|---|---|
001 | 10.3390-cryst12040516 | ||
008 | 220510s2022 CNT 000 0 und d | ||
020 | |a 20734352 (ISSN) | ||
245 | 1 | 0 | |a Synthesis of AlN Nanowires by Al-Sn Flux Method |
260 | 0 | |b MDPI |c 2022 | |
856 | |z View Fulltext in Publisher |u https://doi.org/10.3390/cryst12040516 | ||
520 | 3 | |a This paper presents a recent study on the synthesis of AlN nanowires. AlN nanowires were successfully prepared on sapphire substrate by the Al-Sn flux method. The obtained nanowires were hundreds of nanometers in diameter and tens of microns in length. The results of transmission electron microscopy (TEM) show that the growth direction of AlN nanowires was perpendicular to the C axis. The photoluminescence (PL) spectrum of AlN nanowires shows a broad peak, which is ascribed to the defect levels in the AlN bandgap. This work provides a novel method for growing AlN nanowires, which offers a potential material for the application of photoelectron devices. © 2022 by the authors. Licensee MDPI, Basel, Switzerland. | |
650 | 0 | 4 | |a AlN |
650 | 0 | 4 | |a flux method |
650 | 0 | 4 | |a nanowires |
650 | 0 | 4 | |a optical properties |
700 | 1 | |a Chen, J. |e author | |
700 | 1 | |a Hu, Z. |e author | |
700 | 1 | |a Li, L. |e author | |
700 | 1 | |a Ma, W. |e author | |
700 | 1 | |a Mu, H. |e author | |
700 | 1 | |a Qi, X. |e author | |
700 | 1 | |a Xu, Y. |e author | |
700 | 1 | |a Yu, Y. |e author | |
773 | |t Crystals |