A hybrid active neutral point clamped inverter utilizing Si and Ga2O3 semiconductors: Modelling and performance analysis

A hybrid active neutral point clamped inverter utilizing Si and Ga2O3 semiconductors: Modelling and performance analysis

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In this paper, the performance of an active neutral point clamped (ANPC) inverter is eval-uated, which is developed utilizing both silicon (Si) and gallium trioxide (Ga2O3) devices. The hy-bridization of semiconductor devices is performed since the production volume and fabrication of ultra-wide ban...

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Bibliographic Details
Main Authors: Ansari, S. (Author), Hasan, K. (Author), Haw, L.K (Author), Hussain, A. (Author), Islam, J. (Author), Lipu, M.S.H (Author), Meraj, S.T (Author), Miah, M.S (Author), Yahaya, N.Z (Author)
Format: Article
Language:English
Published: MDPI 2021
Series:Micromachines
Subjects:
Active neutral point clamped
Efficiency
Electric inverters
Energy gap
Fabrication
Gallium compounds
Gallium trioxide
Hybridisation
Hybridization
Inverte
Inverter
Neutral point clamped
Neutral-point clamped inverters
Neutralpoint-clamped (NPC)
Performance
Power electronics
Power-electronics
Semiconducting silicon
Semiconductors
Silicon
Silicon compounds
Switching
Ultra-wide
Ultrawide bandgap
Wide-band-gap semiconductor
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