Electro-optically controlled beam switching via total internal reflection at a domain-engineered interface in LiNbO<sub>3</sub>
We report a novel switching method that occurs due to the electro-optic effect under applied field when a beam incident on an interface between anti-parallel domains in a sample of LiNbO<sub>3</sub> subtends an angle greater than that required for total internal reflection (TIR). We pres...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2001.
|
| Subjects: | |
| Online Access: | Get fulltext |
| Summary: | We report a novel switching method that occurs due to the electro-optic effect under applied field when a beam incident on an interface between anti-parallel domains in a sample of LiNbO<sub>3</sub> subtends an angle greater than that required for total internal reflection (TIR). We present data obtained for wavelengths of 0.543 and 1.52µm and compare this with a theoretical model. This switch has many attractive properties, as TIR is a 100% efficient process leading to the possibility of high contrast ratios; current data shows contrast ratios greater than 100:1 (20 dB). Other properties include relatively simple fabrication procedure, low drive voltages and a wavelength dependence that is less than other electro-optic devices such as Pockels cells. |
|---|