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01323 am a22001813u 4500 |
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13689 |
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|a dc
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|a Boyland, A.J.
|e author
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|a Mailis, S.
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|a Hendricks, J.M.
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|a Smith, P.G.R.
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|a Eason, R.W.
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|a Electro-optically controlled beam switching via total internal reflection at a domain-engineered interface in LiNbO<sub>3</sub>
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|c 2001.
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|z Get fulltext
|u https://eprints.soton.ac.uk/13689/1/2241.pdf
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|a We report a novel switching method that occurs due to the electro-optic effect under applied field when a beam incident on an interface between anti-parallel domains in a sample of LiNbO<sub>3</sub> subtends an angle greater than that required for total internal reflection (TIR). We present data obtained for wavelengths of 0.543 and 1.52µm and compare this with a theoretical model. This switch has many attractive properties, as TIR is a 100% efficient process leading to the possibility of high contrast ratios; current data shows contrast ratios greater than 100:1 (20 dB). Other properties include relatively simple fabrication procedure, low drive voltages and a wavelength dependence that is less than other electro-optic devices such as Pockels cells.
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|a cc_by_nc_nd_4
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|a Article
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