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01385 am a22002293u 4500 |
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13773 |
| 042 |
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|a dc
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1 |
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|a Gawith, C.B.E.
|e author
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|a Fu, A.
|e author
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|a Bhutta, T.
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|a Hua, P.
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|a Shepherd, D.P.
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|a Taylor, E.R.
|e author
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|a Smith, P.G.R.
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|a Milanese, D.
|e author
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|a Ferraris, M.
|e author
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|a Direct-UV-written buried channel waveguide lasers in direct-bonded intersubstrate ion-exchanged neodymium-doped germano-borosilicate glass
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|c 2002-10-28.
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|z Get fulltext
|u https://eprints.soton.ac.uk/13773/1/2406.pdf
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|a We report a technique for producing single-mode buried channel waveguide lasers in neodymium-doped SiO<sub>2</sub>:GeO<sub>2</sub>:B<sub>2</sub>O<sub>3</sub>:Na<sub>2</sub>O (SGBN) glass. Direct bonding forms the basis of this process, providing a buried waveguide layer in the photosensitive SGBN material into which channel confinement can be directly written with a focused UV beam. Characterization of a 7.5-mm-long device was performed using a Ti:Sapphire laser operating at 808 nm and the resultant 1059 nm channel waveguide laser output exhibited single-mode operation, milliwatt-order lasing thresholds, and propagation losses of <0.3 dB cm<sup>-1</sup>.
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|a accepted_manuscript
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|a Article
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