Polycrystalline Silicon - Germanium Emitters for Gain Control, With Application to SiGe HBTs
This paper investigates germanium incorporation into polysilicon emitters for gain control in SiGe heterjunction bipolar transistors. A theory for the base current of a polySiGe emitter is developed, which combines the effects of the polySiGe grains, the grain boundaries and the interfacial layer at...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2003-06.
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| Subjects: | |
| Online Access: | Get fulltext |