Enhanced p-MOSFET performance using strained-Si on SiGe virtual substrates grown by low energy plasma enhanced chemical vapor deposition

Enhanced p-MOSFET performance using strained-Si on SiGe virtual substrates grown by low energy plasma enhanced chemical vapor deposition

Enhancements of up to 100% in transconductance, mobility and on-current performance are demonstrated for p-MOSFET devices using strained-Si on virtual substrates of Si0.85Ge0.15 and Si0.8Ge0.2 compared to standard bulk silicon devices. A standard 0.25 µm high-thermal budget process has been used wit...

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Main Authors: Temple, M.P (Author), Paul, D.J (Author), Tang, Y.T (Author), Waite, A.M (Author), Cerrina, C (Author), Evans, A.G.R (Author), Grasby, T.J (Author), Parker, E.H.C (Author), von Känel, H (Author), O'Neill, A.G (Author)
Format: Article
Language:English
Published: 2005.
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