Electrodeposition of Ni-Si Schottky barriers

• Main Authors: Kiziroglou, M.E (Author), Zhukov, A.A (Author), Abdelsalam, M. (Author), Li, X.L (Author), de Groot, P. (Author), Bartlett, P.N (Author), de Groot, C.H (Author)
• Format: Article
• Language: English
• Published: 2005-10-01.
• Subjects: Article
• Online Access: Get fulltext

Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities. The Ni-Si Schottky barrier is characterized and found to be of high quality for relatively low Si resistivities (1-2 Omega(.)cm), with extremely low reverse leakage. It is shown that a direct correlation exists among the electrodeposition potential, the roughness, and the coercivity of the films. A conductive seed layer or a back contact is not compulsory for electrodeposition on Si with resistivities up to 15 Omega(.)cm. This shows that electrodeposition of magnetic materials on Si might be a viable fabrication technique for magnetoresistance and spintronics applications.