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01269 am a22001933u 4500 |
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261491 |
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|a Kiziroglou, M.E.
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|a Zhukov, A.A.
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|a Abdelsalam, M.
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|a Li, X.L.
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|a de Groot, P.
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|a Bartlett, P.N.
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|a de Groot, C.H.
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|a Electrodeposition of Ni-Si Schottky barriers
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|c 2005-10-01.
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|z Get fulltext
|u https://eprints.soton.ac.uk/261491/1/kiziroglou2639.pdf
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|a Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities. The Ni-Si Schottky barrier is characterized and found to be of high quality for relatively low Si resistivities (1-2 Omega(.)cm), with extremely low reverse leakage. It is shown that a direct correlation exists among the electrodeposition potential, the roughness, and the coercivity of the films. A conductive seed layer or a back contact is not compulsory for electrodeposition on Si with resistivities up to 15 Omega(.)cm. This shows that electrodeposition of magnetic materials on Si might be a viable fabrication technique for magnetoresistance and spintronics applications.
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