Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs
We investigate the validity of the assumption of neglecting carrier tunneling effects on self-consistent electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs. Comparison between simulated and experimental results shows that for accurate modeling of direct tu...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2002.
|
| Subjects: | |
| Online Access: | Get fulltext |