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01382 am a22001453u 4500 |
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262675 |
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|a dc
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|a Mallik, Kanad
|e author
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|a Falster, R.J.
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|a Wilshaw, P.R.
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|a 'Semi-insulating' silicon using deep level impurity doping: problems and potential
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|c 2003-06.
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|z Get fulltext
|u https://eprints.soton.ac.uk/262675/1/sst18_517.pdf
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|a The possibility of using deep level impurities to obtain 'semi-insulating' Czochralski silicon of near-intrinsic resistivity for microwave applications has been analysed. It is shown that co-doping with a deep donor and deep acceptor is effective in producing high resistivity p-type silicon if a single sufficiently deep donor is not available. Values of deep impurity levels and their concentrations ideally suited for the purpose have been evaluated. It is found that there is a trade-off between control over deep impurity doping concentration and the maximum achievable resistivity. Calculations of resistivity using published data for a number of transition metal impurities such as Au, Ag, Cr, Co, Pd, Pt, V and Mn show that V and Mn are best suited to achieve the goal if Au and Ag are disqualified due to high diffusivity. A comparison of Si:Mn with semi-insulating GaAs:Cr shows the limitations of the effectiveness of deep level doping in silicon.
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