'Semi-insulating' silicon using deep level impurity doping: problems and potential

The possibility of using deep level impurities to obtain 'semi-insulating' Czochralski silicon of near-intrinsic resistivity for microwave applications has been analysed. It is shown that co-doping with a deep donor and deep acceptor is effective in producing high resistivity p-type silico...

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Bibliographic Details
Main Authors: Mallik, Kanad (Author), Falster, R.J (Author), Wilshaw, P.R (Author)
Format: Article
Language:English
Published: 2003-06.
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Online Access:Get fulltext

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